| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
ON |
Highly Integrated Lithium Battery Protection • Highly Accurate Overvoltage Detector "25 mV at Room Temperature "30 mV from −5 to 55°C • Fault Detection Thresholds Overvoltage Threshold: SN1/SAN1 = 4.35 V, SAN5 = 4.275 V, SAN6 = 4.28 V Undervoltage Threshold: SN1/SAN1 = 2.4 V, SAN5/6 = 2.3 V Dis |
|
|
|
|
Microchip |
3-Phase Brushless DC (BLDC) Motor Gate Driver • AEC-Q100 Grade 0 Qualified • Quiescent Current: - Sleep Mode: 5 µA Typical - Standby Mode: < 200 µA • LIN Transceiver Interface (MCP8025): - Compliant with LIN Bus Specifications 1.3, 2.2, and SAE J2602 - Supports baud rates up to 20K baud - Intern |
|
|
|
|
Microchip |
3-Phase Brushless DC (BLDC) Motor Gate Driver • AEC-Q100 Grade 0 Qualified • Quiescent Current: - Sleep Mode: 5 µA Typical - Standby Mode: < 200 µA • LIN Transceiver Interface (MCP8025): - Compliant with LIN Bus Specifications 1.3, 2.2, and SAE J2602 - Supports baud rates up to 20K baud - Intern |
|
|
|
|
Microchip |
3-Phase Brushless DC (BLDC) Motor Gate Driver • Three Half-bridge Drivers Configured to Drive External High-Side NMOS and Low-Side NMOS MOSFETs: - Independent input control for high-side NMOS and low-side NMOS MOSFETs - Peak output current: 0.5A @ 12V - Shoot-through protection - Overcurrent an |
|
|
|
|
Microchip |
3-Phase Brushless DC (BLDC) Motor Gate Driver • AEC-Q100 Grade 0 Qualified • Three Half-Bridge Drivers Configured to Drive External High-Side NMOS and Low-Side NMOS MOSFETs: - Independent input control for high-side and low-side NMOS MOSFET gate drives - Typical peak output current: 0.5A @ 12V - |
|
|
|
|
Microchip |
3-Phase Brushless DC (BLDC) Motor Gate Driver • AEC-Q100 Grade 0 Qualified • Three Half-Bridge Drivers Configured to Drive External High-Side NMOS and Low-Side NMOS MOSFETs: - Independent input control for high-side and low-side NMOS MOSFET gate drives - Typical peak output current: 0.5A @ 12V - |
|
|
|
|
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A/ HEAT-SINK MTG 8A) l Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l Small size, simple installation l l Plastic package has Underwriter Laboratory Flammability Classification 94V-O Reliable low cost construction utilizing molded |
|
|
|
|
TRSYS |
SINGLE-PHASE SILICON BRIDGE l l l l l Surge overload rating—200 Amperes peak Low forward voltage drop and reverse leakage Small size, simple installation Plastic package has Underwriter Laboratory Flammability Classification 94V-O Reliable low cost construction utilizing molded |
|
|
|
|
Orient Chip |
Standalone Linear Lithium Battery Charger Programmable Charge Current Up to 800mA No MOSFET, Sense Resistor or Blocking Diode Required Constant-Current/Constant-Voltage Operation with Thermal Protection to Maximize Charge Rate without Risk of Overheating Charges Single Cell Li-Ion Batteries |
|