CJ3401 डाटा शीट PDF( Datasheet )

CJ3401 Feature  -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V.  Super High dense cell design for extremely low RDS(ON)  Reliable and

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(O

MOSFET CJ3401-HF (P-Channel ) Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free Features -P-Channel -High dense cell design for extremely low RDS(ON) -Exceptional on-resistance and m

CJ3401A SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC cur

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON). z Ex