CJ3400 डाटा शीट PDF( Datasheet )

CJ3400 Feature  30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V.  Super High dense cell design for extremely low RDS(ON) .  Reliable and Rugg

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON) z Exce

MOSFET CJ3400-HF (N-Channel ) Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free Features - N-Channel Enhancement mode field effect transistor. - High dense cell design for extermely low

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)MAX   32mΩ@10V  38mΩ@4.5V  45mΩ@2.5

CJ3400A SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC curr