डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CJ2101 | P-Channel MOSFET CJ2101
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE 2. SOURCE 3. DRAIN
APPLICATIONS z High Side Load S |
ZPSEMI |
|
CJ2101 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel 8-V(D-S) MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE |
JCST |
|
CJ2101-G | MOSFET MOSFET
CJ2101-G
RoHS Device
V(BR)DSS -20V
RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V
ID -1.4A
Features
- P-Channel MOSFET - Leading trench technology for low RDS(on)
extending battery life
Mech |
Comchip |
www.DataSheet.in | 2017 | संपर्क |