डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CGHV27200 | GaN HEMT
PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain a |
Cree |
|
CGHV27200 | GaN HEMT | Cree |
www.DataSheet.in | 2017 | संपर्क |