डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CGHV27100 | GaN HEMT
CGHV27100
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wi |
Cree |
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CGHV27100 | GaN HEMT | Cree |
www.DataSheet.in | 2017 | संपर्क |