CGHV1J070D डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| CGHV1J070D | GaN HEMT Die CGHV1J070D
70 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate len |
 Wolfspeed |
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| CGHV1J070D | GaN HEMT Die CGHV1J070D
70 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabricat |
 Cree |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |