डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CGHV1J006D | GaN HEMT Die CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate leng |
Wolfspeed |
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CGHV1J006D | GaN HEMT Die CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabricati |
Cree |
www.DataSheet.in | 2017 | संपर्क |