डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CGH60030D | GaN HEMT Die CGH60030D
30 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including highe |
Cree |
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CGH60030D | GaN HEMT Die | Cree |
www.DataSheet.in | 2017 | संपर्क |