डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CG2H40010 | RF Power GaN HEMT CG2H40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general p |
CREE |
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CG2H40010 | RF Power GaN HEMT | CREE |
www.DataSheet.in | 2017 | संपर्क |