डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CFG40006S | RF Power GaN HEMT CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpo |
Cree |
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CFG40006S | RF Power GaN HEMT | Cree |
www.DataSheet.in | 2017 | संपर्क |