डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CET451AN | N-Channel Enhancement Mode Field Effect Transistor CET451AN
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. |
Chino-Excel Technology |
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CET451AN | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |