डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CES2361 | P-Channel MOSFET CES2361
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -2.2A, RDS(ON) = 150mΩ @VGS = -10V. RDS(ON) = 200mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON). R |
CET |
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CES2362 | N-Channel MOSFET | Chino-Excel Technology |
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CES2361 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |