डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM4412S1 | N-Channel Enhancement Mode Field Effect Transistor CEM4412S1
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON). High po |
Chino-Excel Technology |
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CEM4412S1 | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |