डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEH2608 | Dual MOSFET CEH2608
Dual Enhancement Mode Field Effect Transistor (N Channel)
PRELIMINARY
FEATURES
20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V.
Super high dense |
CET |
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CEH2608 | Dual MOSFET | CET |
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CEH2609 | Dual Enhancement Mode Field Effect Transistor | CET |
www.DataSheet.in | 2017 | संपर्क |