डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEH2288 | N-Channel MOSFET CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliabl |
CET |
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CEH2288 | N-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |