CEF05N6 डाटा शीट PDF( Datasheet )

CEF05N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 5A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing c

CEP05N65/CEB05N65 CEF05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP05N65 CEB05N65 CEF05N65 VDSS 650V 650V 650V RDS(ON) 2.4Ω 2.4Ω 2.4Ω ID 4.5A 4.5A 4.5A d @VGS 10V 10V 10V