डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEE02N6A | N-Channel Enhancement Mode Field Effect Transistor CEE02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
CET |
|
CEE02N6G | N-Channel Enhancement Mode Field Effect Transistor | CET |
|
CEE02N6A | N-Channel Enhancement Mode Field Effect Transistor | CET |
www.DataSheet.in | 2017 | संपर्क |