डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEA6200 | N-Channel MOSFET CEA6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugge |
CET |
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CEA6200 | N-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |