डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CBS05F30 | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
CBS05F30
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max)
3. Pack |
Toshiba Semiconductor |
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CBS05F30 | Schottky Barrier Diode | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |