| No. | Partie # | Fabricant | Description | Fiche Technique |
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Korea Electronics |
2SC4368 = 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 500mA; VCE= 10V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Produc |
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Linear Technology |
100V UV/OV and Reverse Protection Controller n Wide Operating Voltage Range: 2.5V to 60V n Overvoltage Protection to 100V n Reverse Supply Protection to –40V n Bidirectional Electronic Circuit Breaker: n +50mV Forward Sense Threshold n –50mV Reverse (LTC4368-1) n –3mV Reverse (LTC4368-2) n Adju |
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Motorola |
Dual MOS-to-TTL Level Translator |
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Analog Devices |
100V UV/OV and Reverse Protection Controller n Wide Operating Voltage Range: 2.5V to 60V n Overvoltage Protection to 100V n Reverse Supply Protection to –40V n Bidirectional Electronic Circuit Breaker: n +50mV Forward Sense Threshold n –50mV Reverse (LTC4368-1) n –3mV Reverse (LTC4368-2) n Adju |
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Cypress Semiconductor |
1K/4K/16K x36 x2 Bidirectional Synchronous FIFO • High-speed, low-power, bidirectional, First-In, First-Out (FIFO) memories • 1Kx36x2 (CY7C43642) • 4Kx36x2 (CY7C43662) • 16Kx36x2 (CY7C43682) • 0.35-micron CMOS for optimum speed/power • High speed 133-MHz operation (7.5-ns read/write cycle times) • |
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Cypress Semiconductor |
3.3V 1K/4K/16K x36 x2 Bidirectional Synchronous FIFO • 3.3V high-speed, low-power, bidirectional, First-In First-Out (FIFO) memories • 1K ×36 ×2 (CY7C43642AV) • 4K x36 x2 (CY7C43662AV) • 16K x36 x2 (CY7C43682AV) • 0.25-micron CMOS for optimum speed/power • High-speed 133-MHz operation (7.5-ns Read/Writ |
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Cypress Semiconductor |
3.3V 1K 4K 16K x 36 x 18 x 2 Tri Bus FIFO • 3.3V high-speed, low-power, First-In First-Out (FIFO) memories with three independent ports (one bidirectional ×36, and two unidirectional ×18) • 1K ×36/×18×2 (CY7C43646AV) • 4K ×36/×18×2 (CY7C43666AV) • 16K ×36/×18×2 (CY7C43686AV) • 0.25-micron CM |
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Inchange Semiconductor |
Silicon NPN Power Transistor T V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.5 V 10 μA |
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