C3M0021120K डाटा शीट PDF( Datasheet )

C3M0021120K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of

VDS 1200 V C3M0021120K ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOS