डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3112 | 2SC3112 2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
• • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V H |
Toshiba Semiconductor |
|
C3117 | 2SC3117 | Sanyo Semicon Device |
|
C3112 | 2SC3112 | Toshiba Semiconductor |
|
C311C | UPC311C | NEC |
|
C3113 | 2SC3113 | Toshiba Semiconductor |
|
C3114 | 2SC3114 | Sanyo Semicon Device |
|
C3116 | 2SC3116 | Sanyo |
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