डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3076 | 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications Power Switching Applications
2SC3076
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC |
Toshiba |
|
C3074 | 2SC3074 | Toshiba Semiconductor |
|
C3072 | 2SC3072 | Toshiba |
|
C3070 | 2SC3070 | Sanyo Semiconductor Corporation |
|
C3075 | 2SC3075 | Toshiba Semiconductor |
|
C3071 | 2SC3071 | Sanyo Semicon Device |
|
C3076 | 2SC3076 | Toshiba |
|
C30724E | (C30xxx) PhotoDiode | Perkin Elmer Optoelectronics |
|
C30724P | (C30xxx) PhotoDiode | Perkin Elmer Optoelectronics |
|
C30737E | (C30xxx) PhotoDiode | Perkin Elmer Optoelectronics |
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