C2M1000170D डाटा शीट PDF( Datasheet )

VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1.0 Ω N-Channel Enhancement Mode Feature s Package • High Speed Switching w

C2M1000170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Paralle