C2M0160120D डाटा शीट PDF( Datasheet )

VDS 1200 V C2M0160120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 18 A 160 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with L

C2M0160120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to P