BUZ76 डाटा शीट PDF( Datasheet )

BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 VDS 400 V ID 3A RDS(on) 1.8 Ω Package TO-220 AB Ordering Code C67078-S13

BUZ76 Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(O

BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ76 Voss 400 V RoS(on) 1.80 10 3A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND

BUZ76 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS IDS IDM IAR EAR EAS V

isc N-Channel Mosfet Transistor BUZ76 ·FEATURES ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum L

BUZ 76 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 A VDS 400 V ID 2.7 A RDS(on) 2.5 Ω Package TO-220 AB Ordering Code C67

BUZ76A Semiconductor Data Sheet October 1998 File Number 2265.1 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power •