डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ32 | Power Transistor BUZ 32
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 32
VDS
200 V
ID
9.5 A
RDS(on)
0.4 Ω
Package TO-220 AB
Ordering Code C67078- |
Siemens Semiconductor Group |
|
BUZ32 | N-Channel Power MOSFET BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
Features
• 9.5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power • r |
Intersil Corporation |
|
BUZ32 | Power Transistor SIPMOS ® Power Transistor
BUZ 32
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 32
200 V
9.5 A
0.4 Ω
TO-220 AB |
Infineon Technologies AG |
|
BUZ32 | N-Channel MOSFET BUZ32
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ32
Voss 200 V
Ros(on) 0.4 0
10 9.5 A
• 200 VOLTS FOR TELECOMS APPLICATIONS • HIGH CURRENT - FOR PULSED LASER
DRIVES • RATED FOR UNCLAMP |
STMicroelectronics |
|
BUZ32 | N-Channel MOSFET isc N-Channel Mosfet Transistor
BUZ32
·FEATURES ·9.5A, 200V ·RDS(ON) = 0.400Ω ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Ma |
INCHANGE |
|
BUZ323 | Power Transistor BUZ 323
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 323
VDS
400 V
ID
15 A
RDS(on)
0.3 Ω
Package TO-218 AA
Ordering Code C67078 |
Siemens Semiconductor Group |
|
BUZ323 | Power Transistor BUZ 323
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 323
400 V
15 A
0.3 Ω
TO-218 A |
Infineon Technologies AG |
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