डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ211 | N-Channel MOSFET Transistor isc N-Channel Mosfet Transistor
BUZ211
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-L |
Inchange Semiconductor |
|
BUZ211 | (BUZ210 / BUZ211) Power Transistors w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
a t a
e h S
t e
U 4
.c
m o
w
w w
a .D
S a t
e e h
U 4 t
m o .c
|
Siemens |
www.DataSheet.in | 2017 | संपर्क |