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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ20 | Power Transistor BUZ 20
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 20
VDS
100 V
ID
13.5 A
RDS(on)
0.2 Ω
Package TO-220 AB
Ordering Code C67078 |
Siemens Semiconductor Group |
|
BUZ20 | N-Channel Power MOSFET BUZ20
Semiconductor
Data Sheet
October 1998
File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
Features
• 12A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS |
Intersil Corporation |
|
BUZ20 | Power Transistor SIPMOS ® Power Transistor
BUZ 20
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 20
100 V
13.5 A
0.2 Ω
TO-220 A |
Infineon Technologies AG |
|
BUZ20 | N-Channel Power MOSFET Semiconductor
Data Sheet
BUZ20
October 1998 File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power
Features
[ /Title (BUZ20 ) /Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power � |
Harris |
|
BUZ20 | N-Channel MOSFET .~.~L S~DG©OOS@~-1[lHJ~O©'iMJOSO@O~DN©~
BUZ20
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ20
Voss 100 V
ROS(on)
0.2 Q
10 12 A
• 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHIN |
STMicroelectronics |
|
BUZ20 | N-Channel MOSFET isc N-Channel Mosfet Transistor
BUZ20
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lo |
INCHANGE |
|
BUZ201 | Power Transistor |
Siemens Semiconductor Group |
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