BUZ12 डाटा शीट PDF( Datasheet )

BUZ 12 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 VDS 50 V ID 42 A RDS(on) 0.028 Ω Package TO-220 AB Or

isc N-Channel Mosfet Transistor BUZ12 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-

BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 A VDS 50 V ID 42 A RDS(on) 0.035 Ω Package TO-220 AB

isc N-Channel Mosfet Transistor BUZ12A ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to

BUZ 12 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 12 AL Pin 2 D Pin 3 S VDS 50 V ID 42 A RDS(on) 0.035 Ω P