BUZ11A डाटा शीट PDF( Datasheet )

® BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET™ MOSFET T YPE BUZ11A s s s s s V DSS 50 V R DS(on) < 0.055 Ω ID 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE T

BUZ 11 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 A VDS 50 V ID 26 A RDS(on) 0.055 Ω Package TO-220 AB

isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed switc

BUZ 11 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 11 AL Pin 2 D Pin 3 S VDS 50 V ID 26 A RDS(on) 0.055 Ω P