डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ104 | Power Transistor BUZ 104
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BU |
Siemens Semiconductor Group |
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BUZ104 | N-Channel MOSFET isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.1Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations f |
INCHANGE |
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BUZ104L | Power Transistor BUZ 104L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD availab |
Siemens Semiconductor Group |
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BUZ104S | Power Transistor BUZ 104 S
SPP14N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Typ |
Siemens Semiconductor Group |
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BUZ104SL | Power Transistor BUZ 104 SL
SPP13N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 P |
Siemens Semiconductor Group |
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BUZ104SL-4 | Power Transistor Preliminary data
BUZ 104SL-4
SIPMOS ® Power Transistor
• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated
Type BUZ 104SL-4
VDS
55 V
ID
3.2 A
RDS(on)
0.125 Ω
Pac |
Siemens Semiconductor Group |
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