डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ102S | Power Transistor BUZ 102S
SIPMOS Power Transistor
Features • N channel • Enhancement mode • Avalanche rated
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
• dv/dt r |
Infineon |
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BUZ102S | Power Transistor BUZ 102 S
SPP52N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Typ |
Siemens Semiconductor Group |
|
BUZ102SL | Power Transistor BUZ 102 SL
SPP47N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 P |
Siemens Semiconductor Group |
|
BUZ102SL-4 | Power Transistor Preliminary data
BUZ 102SL-4
SIPMOS ® Power Transistor
• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated
Type BUZ 102SL-4
VDS
55 V
ID
6.2 A
RDS(on)
0.033 Ω
Pac |
Siemens Semiconductor Group |
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