डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ100 | Power Transistor BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G T |
Siemens Semiconductor Group |
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BUZ100 | N-Channel MOSFET isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations |
INCHANGE |
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BUZ100L | Power Transistor BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD a |
Siemens Semiconductor Group |
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BUZ100S | Power Transistor BUZ 100 S
SPP77N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Typ |
Siemens Semiconductor Group |
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BUZ100SL | Power Transistor BUZ 100 SL
SPP70N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 P |
Siemens Semiconductor Group |
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BUZ100SL-4 | Power Transistor Preliminary data
BUZ 100SL-4
SIPMOS ® Power Transistor
• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated
Type BUZ 100SL-4
VDS
55 V
ID
7.4 A
RDS(on)
0.023 Ω
Pac |
Siemens Semiconductor Group |
www.DataSheet.in | 2017 | संपर्क |