डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ10 | N-Channel Power MOSFET ®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TEST |
STMicroelectronics |
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BUZ10 | Power Transistor BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Package TO-220 AB
Ord |
Siemens Semiconductor Group |
|
BUZ10 | N-Channel MOSFET isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max) ·175℃ operating temperature ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
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BUZ100 | Power Transistor BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G T |
Siemens Semiconductor Group |
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BUZ100 | N-Channel MOSFET isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations |
INCHANGE |
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BUZ100L | Power Transistor BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD a |
Siemens Semiconductor Group |
|
BUZ100S | Power Transistor BUZ 100 S
SPP77N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Typ |
Siemens Semiconductor Group |
www.DataSheet.in | 2017 | संपर्क |