डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUY58 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
BUY58
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.3V@ IC= 10A
APPLICATIONS ·Designed |
Inchange Semiconductor |
|
BUY58 | Bipolar NPN Device BUY58
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1 |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |