BUX77 डाटा शीट PDF( Datasheet )

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOL

isc Silicon NPN Power Transistor BUX77 DESCRIPTION ·Contunuous Collector Current-IC= 5A ·Collector Power Dissipation- : PC= 40W @TC= 25℃ ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Min

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options A

isc Silicon NPN Power Transistor BUX77A DESCRIPTION ·Contunuous Collector Current IC= 8A ·Collector Power Dissipation- : PC= 50W @TC= 25℃ ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Mi

BUX77A Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500)

BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar

BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar