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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUV22 | 40 AMPERES NPN SILICON POWER METAL TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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BUV22 SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications. • High DC cur |
Motorola Inc |
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BUV22 | SITCHMODE Series NPN Silicon Power Transistor BUV22 SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features http://onsemi.com
• High DC Current Gain: • Low VCE(sat), VCE(s |
ON Semiconductor |
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BUV22 | NPN Silicon Low Frequency High Power Switching Transistor BUV20,BUV21,BUV22,BUV23,BUV24
NPN Silicon Low Frequency High Power Switching Transistor
Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Cha |
ETC |
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BUV22 | Bipolar NPN Device BUV22
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1. |
Semelab |
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BUV22 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV22
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Curren |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |