BUV20 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV20/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. • High DC current g

BUV20 SWITCHMODEt Series NPN Silicon Power Transistor SWITCHMODE series NPN silicon power transistors are designed for high speed, high current, high power applications. • High DC current gain: hFE min

® BUV20 HIGH CURRENT NPN SILICON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS LINEAR AND SWITCHING I

BUV20 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain- : hFE= 20(Min.)@ IC= 25A ·High Switching Speed ·Minimum Lot-to-Lot var