डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUR51 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min) ·High Current Capability ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
p |
INCHANGE |
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BUR51 | HIGH CURRENT NPN SILICON TRANSISTOR ® BUR51
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR
DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case |
STMicroelectronics |
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BUR51 | Bipolar NPN Device BUR51
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1. |
Semelab |
www.DataSheet.in | 2017 | संपर्क |