BUL128D डाटा शीट PDF( Datasheet )

TIGER ELECTRONIC CO.,LTD Product specification HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR BUL128D ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-

Inchange Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting

BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FO

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL128DB DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VC

BUL128DR7 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.  特征 / Features 耐压高、稳定性好、N

BUL128DR8 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.  特征 / Features 耐压高、稳定性好、N