BUK444-800B डाटा शीट PDF( Datasheet )

Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is int

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification BUK444-800B DESCRIPTION ·1.2A, 800V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer C

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·