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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BU931Z | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU931Z
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·Application in hig |
SavantIC |
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BU931Z | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for |
INCHANGE |
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BU931Z | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
BU931Z
NPN SILICON TRANSISTOR
NPN POWER DARLINGTON
FEATURES
* High Operating Junction Temperature * High Voltage Ignition Coil Driver * Very Rugged Bipolar Technology
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UTC |
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BU931ZP | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU931ZP
www.datasheet4u.com
DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·Application in |
SavantIC |
|
BU931ZP | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for |
INCHANGE |
|
BU931ZPFI | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for |
INCHANGE |
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