BU807 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and

BU806 ® BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s NPN DARLINGTONS s LOW BASE-DRIVE REQUIREMENTS s INTEGRATED ANTIPARALLEL )COLLECTOR-EMITTER

BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter 1 TO-220 2.Collec

BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage,

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and