BU508AT डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BU508AT DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust d

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Int