डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BU104D | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for |
INCHANGE |
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BU104 | Silicon NPN Power Transistor | Inchange Semiconductor |
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BU104D | NPN Transistor | INCHANGE |
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