BSS84 डाटा शीट PDF( Datasheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs BSS84 P-CHANNEL MOSFET V(BR)DSS RDS(on)MAX ID -50 V  8Ω@-10V  10Ω@ -5V   -0.13A   DESCRIPTION These miniature

Production specification P-Channel Enhancement Mode Vertical D-MOS Transistor BSS84 FEATURES  Voltage controlled p-channel small Pb signal switch Lead-free  High density cell design for low RDS(ON)

DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Phili

BSS 84 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSS 84 Type BSS 84 BSS 84 Pin 2 S Marking SPs Pin 3 D VDS -50 V ID -0.

BSS84 — P-Channel Enhancement Mode Field-Effect Transistor February 2013 BSS84 P-Channel Enhancement Mode Field-Effect Transistor Features  -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V  Voltage-Co

BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -50V RDS(ON) max 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)

BSS84 　　Pch -60V -0.23A Small Signal MOSFET VDSS RDS(on)(Max.) ID PD -60V 5.3Ω ±0.23A 350mW lFeatures 1) Trench MOSFET technology 2) Very fast switching 3) 4.5V Drive lOutline SOT-23 SST3 　 　 　�