BSS138 डाटा शीट PDF( Datasheet )

May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cel

N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density

Features • Voltage Controlled Small Signal Switch • Surface Mount Package • Moisture Sensitivity Level 1 • Halogen Free. "Green" Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Fr

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SMD Power MOSFET Transistor (N-Channel) BSS138 SMD Power MOSFET Transistor (N-Channel) Features • Low On-Resistance:3.5Ω • Low input capacitance:40pF • Low output capacitance:12pF • Low threshole:1.5

UNISONIC TECHNOLOGIES CO., LTD BSS138 N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Power MOSFET 3  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on

BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) 3.5Ω @ VGS = 10V ID TA = +25°C 200mA Description and Applications This MOSFET has been designed to minimize the on-state resist