BSS123W डाटा शीट PDF( Datasheet )

Product Summary V(BR)DSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performanc

BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 0.17 A, 100 V, RDS(ON) = 6 Ω at V

BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) an